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| 1 . 9 0 . 9 5 0 . 9 5 1 . 0 2. 4 1. 3 2 . 9 0 . 4 switching diode features power dissipation p d: 225 mw (tamb=25 ) forward current i f: 200 m a reverse voltage v r : 75 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 75 v reverse voltage leakage current i r v r =75v 1 a forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv diode capacitance c d v r =0v, f=1mhz 2 pf reverse recovery time t r r 6 ns unit: mm sot-23 marking a6 ki semiconductor co. sot-23 plastic-encapsulate diodes BAS16LT1
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